Two-Dimensional Simulation of Semiconductor Lasers and Semiconductor Optical Amplifiers using ATLAS

The ridge-waveguide semiconductor laser and amplifier is simulated. Comparison of simulation results of static characteristics to experiment has shown good agreement. Simple physical picture of SOA recovery is developed and it shows that any alternation of the carrier lifetimes in the active region of SOA can be used for speed-up of device response. Various combinations of active region doping have been considered as a way of recovery acceleration. Simulation of SOA response shows that using homogeneous doping of active layer, speed-up of the SOA response can be achieved. Doping of a thin part of the active layer results in smaller speed-up, as compared to the case of the whole active layer doping. Relative position of doped layer within the active layer plays no role in response acceleration.