A novel lateral field emitter triode with insitu vacuum encapsulation

Author

Cheol-Min Park ; Moo-Sup Lim ; Byung-Hyuk Min ; Min-Koo Han ; Yearn-Ik Choi

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

305

Lastpage

308

Abstract

We have designed and fabricated a novel lateral field emitter triode, which is in-situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required. The device exhibits low turn-on voltage of 7 V, stable current density of 2 /spl mu/A/tip at V/sub AC/=30 V, and high transconductance of 1.7 /spl mu/S at V/sub AC/=22 V. An in-situ vacuum encapsulation employing recessed cavities by isotropic RIE (Reactive Ion Etch) method and an electron beam evaporated molybdenum vacuum seals is implemented to fabricate a new field emitter triode.

Keywords

electron tube manufacture; encapsulation; triodes; vacuum microelectronics; 1.7 muS; 7 to 30 V; current density; electron beam evaporated molybdenum vacuum seal; fabrication; in-situ vacuum encapsulation; isotropic reactive ion etching; lateral field emitter triode; recessed cavity; transconductance; turn-on voltage; Anodes; Cathodes; Current density; Electrodes; Encapsulation; Etching; Low voltage; Oxidation; Seals; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553590

Filename

553590