12th IEEE International Conference on Advanced Thermal Processing of Semiconductors (IEEE Cat. No.03EX847)

fYear

2004

fDate

28-30 Sept. 2004

Abstract

The following topics are dealt with: rapid thermal processing of semiconductors; annealing; infusion processing; ultrashallow junctions; semiconductor device manufacturing; CMOS devices; pulse forming networks; flashlamps; nickel silicide contact formation; semiconductor doping; oxidation; vertical cavity surface emitting lasers; laser annealing; NIST near infrared emittance measurement system; emissivity compensated pyrometry; temperature calibration; thermometry; thermal radiation; lightpipe radiometers; and silicon device technology

Keywords

CMOS integrated circuits; calibration; elemental semiconductors; flash lamps; heat radiation; laser beam annealing; nickel alloys; oxidation; pyrometers; radiometers; rapid thermal annealing; semiconductor doping; semiconductor-metal boundaries; silicon; silicon alloys; surface emitting lasers; thermometers; CMOS devices; NIST near infrared emittance measurement system; Si; annealing; emissivity compensated pyrometry; flashlamps; infusion processing; laser annealing; lightpipe radiometers; nickel silicide contact formation; oxidation; pulse forming networks; rapid thermal processing; semiconductor device manufacturing; semiconductor doping; semiconductors; silicon device technology; temperature calibration; thermal radiation; thermometry; ultrashallow junctions; vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on

Conference_Location

Portland, OR

Print_ISBN

0-7803-8477-6

Type

conf

DOI

10.1109/RTP.2004.1441691

Filename

1441691