Title :
12th IEEE International Conference on Advanced Thermal Processing of Semiconductors (IEEE Cat. No.03EX847)
Abstract :
The following topics are dealt with: rapid thermal processing of semiconductors; annealing; infusion processing; ultrashallow junctions; semiconductor device manufacturing; CMOS devices; pulse forming networks; flashlamps; nickel silicide contact formation; semiconductor doping; oxidation; vertical cavity surface emitting lasers; laser annealing; NIST near infrared emittance measurement system; emissivity compensated pyrometry; temperature calibration; thermometry; thermal radiation; lightpipe radiometers; and silicon device technology
Keywords :
CMOS integrated circuits; calibration; elemental semiconductors; flash lamps; heat radiation; laser beam annealing; nickel alloys; oxidation; pyrometers; radiometers; rapid thermal annealing; semiconductor doping; semiconductor-metal boundaries; silicon; silicon alloys; surface emitting lasers; thermometers; CMOS devices; NIST near infrared emittance measurement system; Si; annealing; emissivity compensated pyrometry; flashlamps; infusion processing; laser annealing; lightpipe radiometers; nickel silicide contact formation; oxidation; pulse forming networks; rapid thermal processing; semiconductor device manufacturing; semiconductor doping; semiconductors; silicon device technology; temperature calibration; thermal radiation; thermometry; ultrashallow junctions; vertical cavity surface emitting lasers;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-8477-6
DOI :
10.1109/RTP.2004.1441691
