Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current

Author

Takagi, S. ; Yasuda, N. ; Toriumi, A.

Author_Institution

ULSI Res. Center, Toshiba Corp., Kawasaki, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

323

Lastpage

326

Abstract

In this study, we propose a new experimental technique to study the transport properties of stress-induced leakage current (SILC), where the energy of electrons in SILC can be evaluated directly, utilizing the carrier separation measurement. It is found that electrons in SILC lose the energy by around 1.5 eV during tunneling through gate oxides. It is demonstrated that a new carrier transport model including the large energy relaxation describes the experimental I-V characteristics of SILC successfully.

Keywords

MOS integrated circuits; ULSI; carrier mobility; characteristics measurement; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; internal stresses; leakage currents; tunnelling; I-V model; IC reliability; MOS ICs; ULSI; carrier separation measurement; carrier transport model; energy relaxation; experimental I-V characteristics; inelastic tunneling; stress-induced leakage current; Charge carrier processes; Current measurement; Electrons; Energy measurement; Leakage current; MOSFETs; Predictive models; Stress measurement; Tunneling; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553594

Filename

553594