Title :
Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current
Author :
Takagi, S. ; Yasuda, N. ; Toriumi, A.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
In this study, we propose a new experimental technique to study the transport properties of stress-induced leakage current (SILC), where the energy of electrons in SILC can be evaluated directly, utilizing the carrier separation measurement. It is found that electrons in SILC lose the energy by around 1.5 eV during tunneling through gate oxides. It is demonstrated that a new carrier transport model including the large energy relaxation describes the experimental I-V characteristics of SILC successfully.
Keywords :
MOS integrated circuits; ULSI; carrier mobility; characteristics measurement; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; internal stresses; leakage currents; tunnelling; I-V model; IC reliability; MOS ICs; ULSI; carrier separation measurement; carrier transport model; energy relaxation; experimental I-V characteristics; inelastic tunneling; stress-induced leakage current; Charge carrier processes; Current measurement; Electrons; Energy measurement; Leakage current; MOSFETs; Predictive models; Stress measurement; Tunneling; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553594
