Endpoint Detection in Low Open Area TSV Fabrication Using Optical Emission Spectroscopy

Author

Ja Myung Gu ; Thadesar, Paragkumar A. ; Dembla, Ashish ; Bakir, Muhannad S. ; May, Gary S. ; Sang Jeen Hong

Author_Institution

Dept. of Electron. Eng., Myongji Univ., Yongin, South Korea

Volume

4

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

1251

Lastpage

1260

Abstract

Through-silicon via (TSV) technology is a key enabler for 3-D and 2.5-D integration, which provides low-power and high-bandwidth chip-to-chip communication. During TSV fabrication, over-etching may cause notching at the base of the TSVs, resulting in TSV diameter variations. Endpoint detection (EPD) techniques are critical for controlling TSV diameter, and detecting the endpoint for low open areas presents a serious challenge to process engineers. In this paper, a hybrid partial least squares-support vector machine model for optical emission spectroscopy data are successfully demonstrated for an EPD of low open area TSVs. Accurate EPD results are shown for 120, 80, and 25 (mu) m diameter TSVs.

Keywords

etching; integrated circuit manufacture; support vector machines; three-dimensional integrated circuits; 2.5-D integration; 3-D integration; chip-to-chip communication; endpoint detection; least squares-support vector machine model; low open area TSV fabrication; optical emission spectroscopy; over-etching; size 120 mum; size 25 mum; size 80 mum; through-silicon via technology; Etching; Fabrication; Silicon; Support vector machines; Through-silicon vias; Training; Vectors; 3-D integration; endpoint detection (EPD); optical emission spectroscopy (OES); through-silicon via (TSV); through-silicon via (TSV).;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2014.2323070

Filename

6824748