• DocumentCode
    3354585
  • Title

    Wet rapid thermal oxidation of vertical cavity surface emitting laser structures with pyrogenic steam generator

  • Author

    Gutt, Thomas ; Chung, Hin Yiu Anthony ; Feldmeyer, Gerd Joehen

  • Author_Institution
    Infineon Technol. AG, Munich
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    135
  • Lastpage
    142
  • Abstract
    In this article, the successful application of rapid thermal oxidation (RTO) with steam ambient for the selective oxidation of high aluminum containing embedded AlGaAs layer for the formation of current aperture in VCSELs is reported. The steam generation is achieved by the pyrogenic steam generation approach in which hydrogen and oxygen gas mixture is converted into steam by autoignition. Comparing to conventional furnace oxidation, steam-RTO showed a 6 times higher oxidation rate and an excellent oxidation uniformity across 4 inch wafers. It was also observed that after steam-RTO the Cr/Pt/Au p-type contacts had a 50% reduction in specific contact resistance compared to those oxidized in a conventional furnace
  • Keywords
    III-V semiconductors; aluminium compounds; boilers; chromium; contact resistance; gold; oxidation; platinum; rapid thermal processing; semiconductor technology; semiconductor-metal boundaries; surface emitting lasers; AlGaAs-Cr-Pt-Au; VCSEL; aluminum; contact resistance; current aperture; pyrogenic steam generator; vertical cavity surface emitting laser structures; wet rapid thermal oxidation; Aluminum; Apertures; Chromium; Contact resistance; Furnaces; Gold; Hydrogen; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
  • Conference_Location
    Portland, OR
  • Print_ISBN
    0-7803-8477-6
  • Type

    conf

  • DOI
    10.1109/RTP.2004.1441950
  • Filename
    1441950