DocumentCode
3354585
Title
Wet rapid thermal oxidation of vertical cavity surface emitting laser structures with pyrogenic steam generator
Author
Gutt, Thomas ; Chung, Hin Yiu Anthony ; Feldmeyer, Gerd Joehen
Author_Institution
Infineon Technol. AG, Munich
fYear
2004
fDate
2004
Firstpage
135
Lastpage
142
Abstract
In this article, the successful application of rapid thermal oxidation (RTO) with steam ambient for the selective oxidation of high aluminum containing embedded AlGaAs layer for the formation of current aperture in VCSELs is reported. The steam generation is achieved by the pyrogenic steam generation approach in which hydrogen and oxygen gas mixture is converted into steam by autoignition. Comparing to conventional furnace oxidation, steam-RTO showed a 6 times higher oxidation rate and an excellent oxidation uniformity across 4 inch wafers. It was also observed that after steam-RTO the Cr/Pt/Au p-type contacts had a 50% reduction in specific contact resistance compared to those oxidized in a conventional furnace
Keywords
III-V semiconductors; aluminium compounds; boilers; chromium; contact resistance; gold; oxidation; platinum; rapid thermal processing; semiconductor technology; semiconductor-metal boundaries; surface emitting lasers; AlGaAs-Cr-Pt-Au; VCSEL; aluminum; contact resistance; current aperture; pyrogenic steam generator; vertical cavity surface emitting laser structures; wet rapid thermal oxidation; Aluminum; Apertures; Chromium; Contact resistance; Furnaces; Gold; Hydrogen; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
Conference_Location
Portland, OR
Print_ISBN
0-7803-8477-6
Type
conf
DOI
10.1109/RTP.2004.1441950
Filename
1441950
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