DocumentCode
3354846
Title
Radiative properties of silicon-based thin films for partially coherent radiation
Author
Fu, Kang ; Hsu, Pei-Feng ; Zhang, Zhuomin
Author_Institution
Dept. of Mech. & Aerosp. Eng., Florida Inst. of Technol., Melbourne, FL
fYear
2004
fDate
2004
Firstpage
185
Lastpage
193
Abstract
Radiative properties of thin films are derived based on the concept of optical coherence theory. Instead of the previous approach of deriving the property formulae based on the degree of coherence, a direct integration to obtain the averaged properties over a finite spectral resolution is developed. The resulting analytical formulae are in excellent agreement with the prior work. The formulae are compact in form and much easier to use to invert optical properties with measured reflectance or transmittance as compared with the prior work. The incoherent and coherent limits can be easily reduced from the general formulae and the resulting equations corresponding to those of geometric and wave optics, respectively. Rigorous criteria of incoherent and coherent regimes are developed. These criteria are very useful in determining under what situations that simpler wave optics and geometric optics formulae can apply
Keywords
elemental semiconductors; light coherence; semiconductor thin films; silicon; Si; geometric optics; optical coherence theory; optical properties; partially coherent radiation; radiative properties; reflectance; silicon-based thin films; transmittance; wave optics; Coherence; Optical films; Optical materials; Optical surface waves; Reflectivity; Rough surfaces; Semiconductor thin films; Substrates; Surface roughness; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. 12th IEEE International Conference on
Conference_Location
Portland, OR
Print_ISBN
0-7803-8477-6
Type
conf
DOI
10.1109/RTP.2004.1441963
Filename
1441963
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