• DocumentCode
    335530
  • Title

    Evidence for the Antisite Defect BAs in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal

  • Author

    Wang, Z.G. ; Wang, C.H. ; Liu, Y.L. ; Luo, Y. ; Wan, S.K. ; Li, G.H. ; Lin, L.Y.

  • Author_Institution
    Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
  • fYear
    1992
  • fDate
    21-24 Apr 1992
  • Firstpage
    51
  • Lastpage
    54
  • Keywords
    Annealing; Boron; Gallium arsenide; Impurities; Laboratories; Photoluminescence; Pollution measurement; Semiconductor materials; Temperature measurement; Vibration measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
  • Print_ISBN
    0-7503-0242-9
  • Type

    conf

  • DOI
    10.1109/SIM.1992.752676
  • Filename
    752676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=335530