Intracavity difference-frequency generation in GaAS/InGaAs/InGaP butt-joint diode lasers

Author

Aleshkin, V.Ya. ; Biryukov, A.A. ; Gavrilenko, V.I. ; Dubinov, A.A. ; Kocharovsky, Vl.V. ; Maremyanin, K.V. ; Morozov, S.V. ; Nekorkin, S.M. ; Zvonkov, B.N.

Author_Institution

Inst. for Phys. of Microstruct., Russian Acad. of Sci., Nizhny Novgorod

fYear

2008

fDate

Sept. 29 2008-Oct. 4 2008

Firstpage

117

Lastpage

119

Abstract

The room-temperature intracavity difference-frequency generation in mid-infrared spectral range have been observed in a butt-joint GaAs/InGaAs/InGaP quantum-well laser diode which supports lasing at two closely spaced wavelengths in the near-infrared range. A special asymmetric waveguide design and a low-doped substrate that minimize mid infrared losses and realize phase matching condition for the difference-frequency generation process were used in butt-joint lasers.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical frequency conversion; optical phase matching; quantum well lasers; waveguide lasers; GaAs-InGaAs-InGaP; asymmetric waveguide design; butt-joint diode lasers; frequency generation; intracavity difference; low-doped substrate; mid-infrared spectral range; quantum-well laser diode; semiconductor lasers; temperature 293 K to 298 K; Diode lasers; Frequency; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical design; Optical waveguides; Quantum cascade lasers; Semiconductor lasers; Waveguide lasers; difference frequency generation; diode laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on

Conference_Location

Crimea

Print_ISBN

978-1-4244-1973-9

Electronic_ISBN

978-1-4244-1974-6

Type

conf

DOI

10.1109/CAOL.2008.4671849

Filename

4671849