DocumentCode :
3356096
Title :
Observation And Characterization Of Defects In Semiconductors Due To Crystal Process And Ion Implantation By Light Scattering Techniques
Author :
Ogawa, Tomoya
Author_Institution :
Gakushuin University
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
592
Lastpage :
594
Keywords :
Crystals; Gallium arsenide; Grain boundaries; Infrared detectors; Laser beams; Lenses; Light scattering; Optical scattering; Surface emitting lasers; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690690
Filename :
690690
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3356096
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