Title :
Growth and scintillation properties of Pr doped (Lu,Y)3(Ga,Al)5O12 single crystals
Author :
Kamada, Kei ; Yanagida, Takayuki ; Pejchal, Jan ; Nikl, Martin ; Endo, Takanori ; Tsutumi, Kousuke ; Fujimoto, Yutaka ; Fukabori, Akihiro ; Yoshikawa, Akira
Author_Institution :
Mater. Res. Lab., Furukawa Co., Ltd., Tsukuba, Japan
Abstract :
Pr: (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. Pr3+ 5d-4f emission within 300-400nm accompanied by weak Pr3+ 4f-4f emission in 480-650nm are observed in Ga 0-60 at.% substituted samples. Ga 80 at.% substituted sample shows only Pr3+ 4f-4f emission. The light output of Pr1%:Lu2Y1Ga2Al2O12 sample was almost same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay shows 17.9ns (93%) and 68.0ns (7%) using the PMT and digital oscilloscope TDS5032B. Slower decay components are reduced by Ga and Y substitution in LuAG structure.
Keywords :
crystal growth from melt; crystal structure; luminescence; lutetium compounds; praseodymium; scintillation; solid scintillation detectors; yttrium compounds; (Lu-Y)3(Ga-Al)5O12:Pr; Al3+ sites; Lu3+ sites; PMT; Pr doped (Lu,Y)3(Ga,Al)5O12; Pr3+ 4f-4f emission; Pr3+ 5d-4f emission; Y3+ sites; digital oscilloscope; garnet structure; luminescence; micropulling down method; single crystal growth; single crystal scintillation properties; substitution phenomenon; time 17.9 ns; time 68.0 ns; two component scintillation decay; wavelength 300 nm to 400 nm; wavelength 480 nm to 650 nm; Heating;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
Print_ISBN :
978-1-4673-0118-3
DOI :
10.1109/NSSMIC.2011.6154631
