DocumentCode
3356645
Title
A simple voltage reference using transistor with ZTC point and PTAT current source
Author
Najafizadeh, Laleh ; Filanovsky, Igor M.
Author_Institution
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Volume
1
fYear
2004
fDate
23-26 May 2004
Abstract
When a diode-connected MOS transistor is biased with a PTAT current source, the gate-source voltage of such transistor can be temperature independent. Based on this idea a circuit is designed and implemented in a standard 0.18μm CMOS technology. The simulations show that the output voltage of this reference has the temperature coefficient of 4 ppm/°C in the range of -50°C to 150°C. If this transistor is biased below the zero temperature coefficient (ZTC) point this technique opens the way to design a sub-1 V voltage reference.
Keywords
CMOS analogue integrated circuits; MOSFET; reference circuits; semiconductor diodes; -50 to 150 C; 0.18 micron; CMOS technology; PTAT current source; analog electronics; diode-connected MOS transistor; gate-source voltage; temperature effects; threshold voltage; voltage reference; zero temperature coefficient point; CMOS technology; Circuit simulation; Diodes; MOSFETs; Temperature dependence; Temperature distribution; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1328343
Filename
1328343
Link To Document