Title :
Theory of transit-time resonance in ballistic n+-i-n+ diodes. The diode response in THz frequency range
Author :
Korotyeyev, V.V. ; Kochelap, V.A. ; Klimov, A.A.
Author_Institution :
Dept. of Theor. Phys., Inst. of Semicond. Phys., Kiev
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
We investigated the current-voltage characteristics and impedance of the ballistic n+-i-n+ diode made by InAs in THz frequency range. We found the optimal diode parameters and the electrical conditions to amplify and generate THz radiation.
Keywords :
III-V semiconductors; indium compounds; semiconductor diodes; terahertz wave generation; transit time devices; InAs; THz frequency range; ballistic n+-i-n+ diodes; current-voltage characteristics; electrical conditions; optimal diode parameters; transit-time resonance; Electrons; Frequency; High speed optical techniques; Impedance; Nonlinear optics; Optical mixing; Optical pulse generation; Physics; Resonance; Semiconductor diodes; Terahertz generation; ballistic transport; negative dynamic impedance;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-1973-9
Electronic_ISBN :
978-1-4244-1974-6
DOI :
10.1109/CAOL.2008.4671905
