DocumentCode
3356992
Title
Theory of transit-time resonance in ballistic n+-i-n+ diodes. The diode response in THz frequency range
Author
Korotyeyev, V.V. ; Kochelap, V.A. ; Klimov, A.A.
Author_Institution
Dept. of Theor. Phys., Inst. of Semicond. Phys., Kiev
fYear
2008
fDate
Sept. 29 2008-Oct. 4 2008
Firstpage
261
Lastpage
263
Abstract
We investigated the current-voltage characteristics and impedance of the ballistic n+-i-n+ diode made by InAs in THz frequency range. We found the optimal diode parameters and the electrical conditions to amplify and generate THz radiation.
Keywords
III-V semiconductors; indium compounds; semiconductor diodes; terahertz wave generation; transit time devices; InAs; THz frequency range; ballistic n+-i-n+ diodes; current-voltage characteristics; electrical conditions; optimal diode parameters; transit-time resonance; Electrons; Frequency; High speed optical techniques; Impedance; Nonlinear optics; Optical mixing; Optical pulse generation; Physics; Resonance; Semiconductor diodes; Terahertz generation; ballistic transport; negative dynamic impedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers, 2008. CAOL 2008. 4th International Conference on
Conference_Location
Crimea
Print_ISBN
978-1-4244-1973-9
Electronic_ISBN
978-1-4244-1974-6
Type
conf
DOI
10.1109/CAOL.2008.4671905
Filename
4671905
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