DocumentCode :
3357450
Title :
Investigation of quantum effects in highly-doped MOSFETs by means of a self-consistent 2D model
Author :
Spinelli, A. ; Benvenuti, A. ; Pacelli, A.
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fYear :
1996
fDate :
8-11 Dec. 1996
Firstpage :
399
Lastpage :
402
Abstract :
We report on a self-consistent two-dimensional model for the analysis of quantum-mechanical effects in heavily doped MOSFETs. Self-consistency between the Schrodinger and the Poisson/continuity equations is achieved by an iterative procedure based on the concept of a locally modified effective intrinsic density. Our implementation provides a natural smooth transition between the quantum and classical regimes and allows for an advantageous trade-off between computational efficiency and physical accuracy. Insight into the charge and current distribution, and a rigorous evaluation of the device I-V characteristic can be achieved. Good agreement with experimental data is obtained over a wide range of channel doping concentrations.
Keywords :
MOSFET; Schrodinger equation; doping profiles; heavily doped semiconductors; iterative methods; semiconductor device models; semiconductor doping; Poisson equations; Schrodinger equations; channel doping concentrations; computational efficiency; continuity equations; current distribution; device I-V characteristic; highly-doped MOSFETs; iterative procedure; locally modified effective intrinsic density; quantum effects; self-consistent 2D model; Computational efficiency; Current distribution; Doping; Lead compounds; MOS devices; MOSFET circuits; Microelectronics; Poisson equations; Quantum computing; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-3393-4
Type :
conf
DOI :
10.1109/IEDM.1996.553612
Filename :
553612
Link To Document :
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