DocumentCode :
3357567
Title :
Ferroelectric and pyroelectric characteristics of A site Nb+5 doped PZT
Author :
Tripathi, Anita ; Tripathi, A.K. ; Goel, T.C. ; Pillai, P.K.C.
Author_Institution :
Dept. of Phys., Indian Inst. of Technol., New Delhi, India
fYear :
1996
fDate :
25-30 Sep 1996
Firstpage :
878
Lastpage :
883
Abstract :
Nb+5 doped PZT ceramic has been prepared by conventional solid solution technique. The doping has been carried out at A-site by varying the dopant concentration from 2.5% to 7.5%. The X-ray diffractograms of these samples show tetragonality with c/a ratio close to unity. The dielectric measurements do not show any Curie transition upto 160°C. It was found that the dielectric constant at room temperature initially increases as Niobium concentration increases from 2.5 to 4% and then starts decreasing upto 7.5 atom percent of Niobium. Hysteresis phenomena in these samples was studied to ascertain the ferroelectric nature of the specimens. These samples were corona poled and their piezo and pyroelectric properties were measured. Pyrocoefficient (Ps), saturation polarization (Ps) and remanent polarization show maximum values of 10 nC/cm2°C, 17 μC/cm2 respectively at around 4 atom% of niobium concentration. These values of Ps and P, coupled with low dielectric permittivity and loss suggests that A-site Nb+5 doped PZT may find useful applications in pyroelectric detectors
Keywords :
dielectric hysteresis; ferroelectric materials; lead compounds; niobium; permittivity; piezoceramics; pyroelectricity; A-site; Nb+5 doped PZT ceramic; PZT:Nb; PbZrO3TiO3:Nb; X-ray diffraction; corona poling; dielectric permittivity; ferroelectric characteristics; hysteresis; piezoelectric properties; pyroelectric characteristics; remanent polarization; saturation polarization; solid solution; Atomic measurements; Ceramics; Dielectric losses; Doping; Ferroelectric materials; Niobium; Polarization; Pyroelectricity; Solids; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
Type :
conf
DOI :
10.1109/ISE.1996.578225
Filename :
578225
Link To Document :
بازگشت