Experimental studies on control of growth interface in MVB grown CdZnTe and its consequences

Control of growth interface has always been a challenging concern for CZT crystal growers because of its poor thermal and melt transport properties. Control over growth interface was achieved for Modified Vertical Bridgman growth of CZT under high (from 5 to 7.5 wt %) initial Tellurium conditions. Although exact point-to-point reproducibility was not achieved but the overall shape consistency was reproduced with an optimally defined set of growth parameters. IR Microscopy was done on the interface morphology to better understand and compare the secondary phase generation phenomena in different kind of interfaces and its consequences. Prominent consistency was observed among the spectral properties of the crystals in all the growths with high initial Tellurium.