The ESR characters of unintentionally doped 4H-SiC with Si ion implanted

The intrinsic defects in epitaxial semi-insulating 4H-SiC that are implanted by Si ion, annealing after implanted respectively are studied by electron spin resonance (ESR). The results show that the intrinsic defects in Si ion implanted and annealing are the same as that as-grown 4H-SiC consist of carbon vacancy (Vc) and complex-compounds-related Vc, which is to say Si ion implanted and annealing treatment have a few effects on the intrinsic defects in unintentionally doped 4H-SiC prepared by low pressure chemical vapor deposition. The ESR spectrum are the same as that as-grown samples with Xe light, which are illumination time changes the relative density of intrinsic defects in 4H-SiC; the relative density of intrinsic defects reaches a maximum when the illumination time is 2.5 min, and the ratio of Vc to complex compounds is minimized simultaneously. It can be deduced that some Vsi may be transformed to the complex-compounds-related Vc because of the illumination.