Low-Voltage CMOS Temperature Sensor Design Using Schottky Diode-Based References

Author

Cahoon, Curtis ; Baker, R.

Author_Institution

Boise State Univ., Boise

fYear

2008

fDate

18-18 April 2008

Firstpage

16

Lastpage

19

Abstract

This paper presents the design of a fully differential sigma-delta temperature sensor using Schottky diode-based current references as a replacement for the traditional PN junction diode-based current references. This sensor was designed using the AMI 0.5um process through the MOSIS fabrication organization, and the chip performance will be evaluated and compared to the simulated results. The use of the Schottky diode and differential current sensing in the sigma-delta-type sensor allows for lower voltage operation and better noise performance.

Keywords

CMOS integrated circuits; Schottky diodes; temperature sensors; CMOS temperature sensor; MOSIS fabrication; PN junction diode; Schottky diode; sigma-delta temperature sensor; Ambient intelligence; CMOS process; Circuits; Resistors; Schottky diodes; Semiconductor device doping; Semiconductor device noise; Semiconductor diodes; Temperature sensors; Voltage; CMOS; CTAT; PTAT; schottky diode; sigma-delta modulation; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2008. WMED 2008. IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

978-1-4244-2343-9

Electronic_ISBN

978-1-4244-2344-6

Type

conf

DOI

10.1109/WMED.2008.4510657

Filename

4510657