/spl delta/-doped source/drain 0.1-/spl mu/m n-MOSFETs with extremely shallow junctions

Author

Murakami, E. ; Harada, K. ; Hisamoto, D. ; Kimura, S.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

439

Lastpage

442

Abstract

A method of using shallow junctions and a low substrate doping concentration in 0.1- to 0.2-/spl mu/m MOSFETs has been developed. An Sb /spl delta/-doping technique is used to form extremely shallow (x/sub j/<20 nm) junctions. A 0.17-/spl mu/m n-MOSFET can be operated with a peak substrate-doping concentration of 1/spl times/10/sup 17/ cm/sup -3/. This approach reduces the junction capacitance, the junction leakage, and the V/sub th/ shift caused by substrate bias.

Keywords

MOSFET; antimony; capacitance; doping profiles; ion implantation; isolation technology; nanotechnology; semiconductor junctions; /spl delta/-doped source/drain n-MOSFETs; 0.1 to 0.2 mum; 0.17 mum; LOCOS isolation; Sb /spl delta/-doping technique; Si:Sb; extremely shallow junctions; ion implantation; junction capacitance; junction leakage; low substrate doping concentration; substrate bias effects; threshold voltage shift; Annealing; Atomic layer deposition; Doping; Ion implantation; Laboratories; MOSFET circuits; Surface cleaning; Surface contamination; Surface resistance; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553621

Filename

553621