A 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing in an NH/sub 3/ ambient

Author

Segawa, M. ; Yabu, T. ; Arai, M. ; Moriwaki, M. ; Umimoto, H. ; Sekiguchi, M. ; Kanda, A.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

443

Lastpage

446

Abstract

This paper reports a 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing (RTP) in an NH/sub 3/ ambient and low energy boron implantation. It is found that the nitrogen atoms induced by the RTP in an NH/sub 3/ ambient diffuse into the substrate in source/drain regions and suppress the diffusion of boron ions. This new process allows the improved short channel effect in sub-0.2 /spl mu/m regime and the suppression of boron penetration for p-MOSFETs with 4-nm gate oxide. Moreover, this process provides high current drivability due to the low resistance at the silicide/p/sup +/-silicon interface and the low sheet resistance on Ti-silicided source/drain regions.

Keywords

MOSFET; contact resistance; doping profiles; ion implantation; rapid thermal processing; secondary ion mass spectra; semiconductor junctions; 0.18 mum; 4 nm; B ion diffusion suppression; N atom diffusion; NH/sub 3/; NH/sub 3/ ambient; SIMS profiles; Ti-salicided p-MOSFET; TiSi-Si:B; contact resistance; high current drivability; low energy B implantation; low sheet resistance; rapid thermal processing; shallow junctions; short channel effect; silicide/p/sup +/-Si interface; source/drain regions; Annealing; Boron; Doping profiles; Electrodes; Fabrication; MOSFET circuits; Nitrogen; Rapid thermal processing; Silicidation; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553622

Filename

553622