A 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing in an NH/sub 3/ ambient

This paper reports a 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing (RTP) in an NH/sub 3/ ambient and low energy boron implantation. It is found that the nitrogen atoms induced by the RTP in an NH/sub 3/ ambient diffuse into the substrate in source/drain regions and suppress the diffusion of boron ions. This new process allows the improved short channel effect in sub-0.2 /spl mu/m regime and the suppression of boron penetration for p-MOSFETs with 4-nm gate oxide. Moreover, this process provides high current drivability due to the low resistance at the silicide/p/sup +/-silicon interface and the low sheet resistance on Ti-silicided source/drain regions.