• DocumentCode
    3359922
  • Title

    Compact modeling and simulation of PD-SOI MOSFETs: Current status and challenges

  • Author

    Goo, Jung-Suk ; Williams, Richard Q. ; Workman, Glenn O. ; Chen, Qiang ; Lee, Sungjae ; Nowak, Edward J.

  • Author_Institution
    Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA
  • fYear
    2008
  • fDate
    21-24 Sept. 2008
  • Firstpage
    265
  • Lastpage
    272
  • Abstract
    This paper reviews the status and challenges of the modeling partially-depleted silicon-on-insulator transistors. Many challenges stem from the floating-body potential, which offers advantages in terms of performance and leakage, but presents complex electrical behavior. Circuit simulator considerations and the importance of model standardization are also highlighted.
  • Keywords
    MOSFET; silicon-on-insulator; PD-SOI MOSFET; circuit simulator; floating-body potential; partially-depleted silicon-on-insulator transistors; Calibration; Circuit simulation; Circuit topology; Contacts; Fitting; Impact ionization; MOSFETs; Numerical models; Semiconductor device modeling; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2008. CICC 2008. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-2018-6
  • Electronic_ISBN
    978-1-4244-2019-3
  • Type

    conf

  • DOI
    10.1109/CICC.2008.4672074
  • Filename
    4672074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3359922