A design concept for the low forward voltage drop 4500 V trench IGBT

Author

Nitta, T. ; Uenishi, A. ; Minato, T. ; Kusunoki, S. ; Takahashi, T. ; Nakamura, H. ; Nakamura, K. ; Aono, S. ; Harada, M.

Author_Institution

Mitsubishi Electr. Corp., Itami, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

43

Lastpage

46

Abstract

A design concept for a new trench IGBT structure for low forward voltage drop is described. The low forward voltage drop can be achieved by minimizing the p-base region to increase the hole density of the n-base near the emitter side, and by simultaneously keeping MOS channel resistance low. For 4500 V devices, the “triplet” type structure (one p-base every three trenches) is the optimum one, and it improves the forward voltage drop by about 10% over the conventional structure

Keywords

design engineering; electric resistance; hole density; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; 4500 V; MOS channel resistance; emitter side; forward voltage drop; n-base hole density; p-base region minimization; trench IGBT; trench IGBT design; trench IGBT structure; trenches; triplet type structure; Conductivity; Current density; Insulated gate bipolar transistors; Laboratories; Low voltage; Numerical simulation; Proposals; Shape; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702625

Filename

702625