The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application

Author

Nirschl, Thomas ; Wang, Peng-Fei ; Hansch, Walter ; Schmitt-Landsiedel, Doris

Author_Institution

Inst. for Tech. Electron., Tech. Univ. of Munich, Germany

Volume

3

fYear

2004

fDate

23-26 May 2004

Abstract

The TFET is an alternative device for deep sub-micron CMOS with very good short channel and leakage characteristics. The paper presents investigations on properties important for circuit implementation: measurements are performed to verify the working principle and the temperature dependence of the TFET. A simulation model is developed and fitted to the silicon results to be able to do circuit design. Using the simulation models for the n-channel and p-channel device, the complementary inverter is analyzed and compared to the standard CMOS implementation.

Keywords

CMOS integrated circuits; circuit simulation; field effect transistors; tunnelling; circuit design; circuit implementation; complementary inverter; deep sub-micron CMOS; leakage characteristics; n-channel devices; p-channel device; short channel; temperature dependence; tunnelling field effect transistors; Analytical models; Circuit simulation; Circuit synthesis; FETs; Inverters; Performance evaluation; Semiconductor device modeling; Silicon; Temperature dependence; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328846

Filename

1328846