Modeling of gate oxide short defects in MOSFETS

We investigate the modeling of gate oxide shorts (GOS) in MOSFETs. We target channel-gate oxide shorts defects which are common shorts in today´s MOSFETs and will become prevalent in future CMOS technologies. The proposed model for a defective MOSFET augments the defect-free model with three current sources. We test the validity of our model using HSPICE simulations, which show a good match in the drain and gate currents between the proposed model and the characteristics of the defective MOSFET.