SSOI technology for integrated Schottky barrier diode

Author

Gamble, H.S. ; Baine, P. ; Bain, M. ; Armstrong, B.M. ; Mitchell, S.J.N. ; Fusco, V.F. ; Stewart, J.A.C.

Author_Institution

Sch. of Electr. & Electron. Eng., Queen´s Univ., Belfast, UK

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

88

Lastpage

91

Abstract

In fabricating MMICs on silicon, a conflict arises between the requirement of low resistivity silicon (LRS) for active device fabrication, and very high resistivity silicon (VHRS) for low interconnect loss. Two differing solutions are presented here. Low loss CPW lines have been fabricated on oxidised porous silicon (OPS) formed on 1-3 /spl Omega/cm silicon wafers, yielding typical losses of 8.5 dB/cm at 30 GHz. Alternatively, silicon on insulator (SOI) substrates, produced by bonding 1-3 /spl Omega/cm silicon wafers to 2-4 k/spl Omega/ "handle" wafers, give CPW line losses of 2.2 dB/cm at 30 GHz. In addition, by incorporating a buried tungsten layer to form a silicon-on-silicide-on-insulator (SSOI) structure, integrated Schottky barrier diodes, with low and controllable C/sub j/ and R/sub s/, can be produced.

Keywords

MMIC; Schottky diodes; buried layers; coplanar waveguides; electrical resistivity; losses; microwave diodes; semiconductor device metallisation; silicon-on-insulator; wafer bonding; 1 to 3 ohmcm; 2 to 4 kohm; 30 GHz; CPW line losses; MMIC fabrication; SOI substrates; SSOI structure; SSOI technology; Si-WSi/sub 2/-SiO/sub 2/; VHRS; active device fabrication; buried tungsten layer; handle wafers; integrated Schottky barrier diode; integrated Schottky barrier diodes; interconnect loss; junction capacitance; losses; low loss CPW lines; low resistivity silicon; oxidised porous silicon; series resistance; silicon; silicon on insulator substrates; silicon wafer bonding; silicon wafers; silicon-on-silicide-on-insulator structure; very high resistivity silicon; Conductivity; Conductors; Coplanar waveguides; Fabrication; Schottky barriers; Schottky diodes; Silicon compounds; Silicon on insulator technology; Tungsten; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942346

Filename

942346