Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

Author

Rieh, J.-S. ; Greenberg, D. ; Jagannathan, B. ; Freeman, G. ; Subbanna, S.

Author_Institution

Commun. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

110

Lastpage

113

Abstract

Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

Keywords

Ge-Si alloys; cooling; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device packaging; semiconductor materials; thermal management (packaging); thermal resistance; SiGe; deep trench geometry; emitter length; emitter width; heat dissipation interference; high speed SiGe HBTs; high speed SiGe heterojunction bipolar transistors; junction temperature rise; measurement; modeling; physical model; power density; thermal resistance; Electrical resistance measurement; Geometry; Germanium silicon alloys; Length measurement; Resistance heating; Silicon germanium; Solid modeling; Temperature; Thermal resistance; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942350

Filename

942350