A monolithic IGBT gate driver implemented in a conventional 0.8 μm BiCMOS process

Author

Ramezani, Mehrdad ; Salama, C.A.T.

Author_Institution

Toronto Univ., Ont., Canada

fYear

1998

fDate

3-6 Jun 1998

Firstpage

109

Lastpage

112

Abstract

This paper discusses the design and implementation of a monolithic gate driver for an insulated gate bipolar transistor (IGBT). The objective is to implement a high voltage (25 V) monolithic gate driver with an efficient protection circuit in a conventional low-voltage (5 V) high-density (0.8 μm) BiCMOS process. Extended drain MOSFETs are used to implement the high-voltage capability in this design

Keywords

BiCMOS integrated circuits; driver circuits; insulated gate bipolar transistors; integrated circuit design; integrated circuit testing; power MOSFET; power integrated circuits; 0.8 micron; 25 V; 5 V; BiCMOS process; IGBT; extended drain MOSFETs; high voltage monolithic gate driver; high-voltage capability; insulated gate bipolar transistor; low-voltage high-density BiCMOS process; monolithic IGBT gate driver; monolithic gate driver; protection circuit; BiCMOS integrated circuits; Capacitance; Doping; Driver circuits; Insulated gate bipolar transistors; Inverters; MOS devices; MOSFETs; Protection; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702647

Filename

702647