High frequency methods for characterization of oxidized porous silicon

Author

Peterson, R.L. ; Itotia, I. ; Drayton, R.F.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

210

Lastpage

214

Abstract

This paper compares insertion loss and T-resonator methods to characterize the electrical properties of oxidized porous silicon. The insertion method provided consistent dielectric and attenuation data on a range of conductive substrates, while the T-method was limited to low loss substrates. The estimated effective dielectric constant is 3.3 for a dielectric constant value of 5.6 and attenuation data at 4 and 40 GHz is 3.12 and 8.39 dB/cm, respectively, for a 26 /spl mu/m thick film.

Keywords

MIS structures; dielectric losses; dielectric thin films; elemental semiconductors; microwave materials; oxidation; permittivity; porous semiconductors; semiconductor-insulator boundaries; silicon; 26 micron; 4 GHz; 40 GHz; T-method; T-resonator methods; attenuation data; conductive substrates; dielectric constant; dielectric data; electrical properties; estimated effective dielectric constant; high frequency methods; insertion loss method; insertion method; low loss substrates; oxidized porous silicon; Attenuation; Circuit testing; Conductivity; Dielectric constant; Dielectric losses; Dielectric materials; Dielectric substrates; Fabrication; Frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942367

Filename

942367