Metamorphic InGaAs/AlInAs heterostructure field effect transistors: layer growth, device processing and performance

Author

Cappy, Alain

Author_Institution

Inst. d´´Electron. et de Microelectron., CNRS, Villeneuve d´´Ascq, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

3

Lastpage

6

Abstract

This paper presents an overview of metamorphic (or strain relaxed) InGaAs/AlInAs heterostructure field effect transistors. The growth of the metamorphic layer and its characterization in terms of structural and electrical properties are presented in a first part. The device processing and device performance are successively described in a second part. The device performance is compared with the state of the art performance of pseudomorphic HFET on GaAs and lattice matched HFET on InP. The interest and the potential applications of the metamorphic HFET are then given in conclusion

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; HEMTs; InGaAs-AlInAs; MBE layer growth; device performance; device processing; electrical properties; heterostructure field effect transistors; metamorphic devices; strain relaxed devices; Electrons; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Photonic band gap; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491919

Filename

491919