Equation for terminal volt-ampere characteristics of MOS-controlled thyristors

Author

Czarkowski, Dariusz ; Kazimierczuk, Marian K.

Author_Institution

Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA

fYear

1992

fDate

4-9 Oct 1992

Firstpage

1158

Abstract

An equation for the i_K-ν_AK static characteristic of an MOS-controlled thyristor (MCT) is derived using a four-transistor equivalent model of the device. The equation is similar to that for forward-biased diodes. The equivalent saturation current of the MCT is a function of both the saturation currents and the forward and reverse current gains of the npn and pnp bipolar transistors. Effects of these parameters on the MCT equivalent saturation current are investigated. Voltages and currents of all transistors that form the MCT equivalent model are simulated using SPICE to explain the behavior of the device in the forward-biased region. Finally, the experimentally i_K-ν_AK characteristics are presented. The calculated and measured i _K-ν_AK characteristics were in good agreement. The measured on-voltage drop was 1.6 V at a cathode current of 200 A and a temperature of 300 K

Keywords

SPICE; digital simulation; equivalent circuits; metal-insulator-semiconductor devices; semiconductor device models; thyristors; 1.6 V; 200 A; 300 K; I-V characteristics; MOS-controlled thyristors; SPICE; bipolar transistors; cathode; current gains; digital simulation; forward bias; four-transistor equivalent model; on-voltage drop; saturation current; semiconductor device models; Bipolar transistors; Cathodes; Current measurement; Diodes; Equations; MOSFETs; SPICE; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE

Conference_Location

Houston, TX

Print_ISBN

0-7803-0635-X

Type

conf

DOI

10.1109/IAS.1992.244415

Filename

244415