• DocumentCode
    3363457
  • Title

    Growth of PZN crystals with improved optical quality using the BSFT technique

  • Author

    Erdei, S. ; Schlecht, R.G. ; Kovács, L.

  • Author_Institution
    Lasergenics Corp., San Jose, CA, USA
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    541
  • Abstract
    The bottom seeded fluxothermal (BSFT) high temperature solution growth technique was used to grow PZN [Pb(Zn1/3Nb2/3 )O3] relaxor crystals. This method can separate the perovskite and pyrochlore phases, decrease the spontaneous nucleation and increase the thermodynamic driving force resulting in larger crystals than can be obtained by the conventional slow cooling techniques. The BSFT technique can also improve the quality of the structural and morphological characteristics, which has been demonstrated by visual observation, XRD, Raman, UV-VIS, and IR absorption measurements. These PZN crystals have less distortion in the unit cell, high optical transparency in the 390mn-5700nm range, and improved Pb related stoichiometry
  • Keywords
    Raman spectra; X-ray diffraction; crystal growth from solution; crystal structure; ferroelectric materials; infrared spectra; lead compounds; stoichiometry; transparency; ultraviolet spectra; visible spectra; 390 to 5700 nm; BSFT technique; IR absorption; PZN relaxor crystals; Pb stoichiometry; Pb(Zn1/3Nb2/3)O3; PbZnO3NbO3; Raman measurements; UV-VIS measurements; XRD; bottom seeded fluxothermal high temperature solution growth technique; distortion; high optical transparency; morphological characteristics; perovskite phases; pyrochlore phases; spontaneous nucleation; structural characteristics; thermodynamic driving force; unit cell; visual observation; Cooling; Crystals; Distortion measurement; Electromagnetic wave absorption; Niobium; Optical distortion; Temperature; Thermal force; Thermodynamics; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.942378
  • Filename
    942378