DocumentCode
3363754
Title
Analysis of Power Efficiency for Four-Phase Negative Charge Pumps with Body Potential Control
Author
Hsu, Chien-Pin ; Lin, Hongchin
Author_Institution
Nat. Chung-Using Univ., Taichung
fYear
2007
fDate
May 30 2007-June 1 2007
Firstpage
1
Lastpage
4
Abstract
In this paper, the compact model of power efficiency for four-phase negative charge pumps is derived. By including parasitic effects in the pump, discrepancies between the model and the post-layout simulated results are within 6%. The proposed four-phase negative charge pump was fabricated by a 0.25 mum flash memory technology. Due to the special body potential controlled structure to minimize body effects and noise due to PN junction conduction, it can pump to -10.3 V at 1.2 V supply voltage with 10 stages.
Keywords
flash memories; p-n junctions; PN junction conduction; body potential control; flash memory technology; four-phase clocks; four-phase negative charge pumps; parasitic effects; power efficiency analysis; Capacitors; Charge pumps; Clocks; Energy consumption; Flash memory; Parasitic capacitance; Switches; Switching circuits; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
1-4244-0757-5
Electronic_ISBN
1-4244-0757-5
Type
conf
DOI
10.1109/ICICDT.2007.4299562
Filename
4299562
Link To Document