Title :
Ferroelectric properties of BaTi0.91(Hf0.5Zr 0.5)0.09O3 thin films fabricated by pulsed laser deposition method
Author :
Kakemoto, H. ; Kakimoto, K. ; Baba, A. ; Fujita, S. ; Masuda, Y.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hirosaki Inst. of Technol., Aomori, Japan
Abstract :
BaTi0.91(Hf0.5Zr0.5)0.09 O3 thin films on Pt/SiO2/Si(100) substrates were fabricated by pulsed laser deposition using fourth harmonic generated light (λ=266 nm) from an Nd3+:YAG laser beam. The crystallinity and stoichiometry of BaTi0.91(Hf0.5Zr0.5)0.09O 3 films were determined by x-ray diffraction, x-ray fluorescence analysis and electron probe microanalysis. The ferroelectric properties of the thin films were investigated by electrical measurements. The leakage current density increased from 10 -11 to 10-3 A/cm2 with increasing electric field up to 200 kV/cm. The dielectric constant, remanent polarization and coercive field of BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films were estimated to be 120 at 1 kHz, 8.7 μC/cm 2 and 127 kV/cm, respectively
Keywords :
X-ray diffraction; X-ray fluorescence analysis; barium compounds; dielectric hysteresis; dielectric losses; dielectric polarisation; electron probe analysis; ferroelectric thin films; leakage currents; permittivity; pulsed laser deposition; stoichiometry; 1 kHz; 266 nm; BaTi0.91(Hf0.5Zr0.5)0.09 O3; BaTi0.91(Hf0.5Zr0.5)0.09 O3 thin films; BaTiO3HfO3ZrO3; Nd3+:YAG laser beam; PLD fabrication; Pt-SiO2-Si; Pt/SiO2/Si(100) substrates; Si; coercive field; crystallinity; dielectric constant; electrical measurements; electron probe microanalysis; ferroelectric properties; fourth harmonic generated light; leakage current density; remanent polarization; stoichiometry; x-ray diffraction; x-ray fluorescence analysis; Dielectric thin films; Ferroelectric materials; Hafnium; Neodymium; Optical harmonic generation; Optical pulse generation; Pulsed laser deposition; Sputtering; X-ray lasers; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942393
