ZnO thin films produced by the RF magnetron sputtering

Author

Huawa Yu ; Jing Wang ; Yangan Yan ; Xin Wang ; Bin Gao ; Hanchen Liu ; Yali Du

Author_Institution

Sch. of Sci., Xi´an Polytech. Univ., Xi´an, China

Volume

5

fYear

2011

fDate

12-14 Aug. 2011

Firstpage

2486

Lastpage

2489

Abstract

ZnO thin films with (002) orientation have been deposited on Si(100) substrate by radio frequency (RF) magnetron sputtering technique. The influence of RF power and oxygen ratio on the the grain size, the residual stress and optical properties was investigated by X-ray diffraction, transmission spectra and photoluminescence spectra. The results show that the ZnO film deposited with sputtering power (100 W) and oxygen ratio(60%), can obtain its best c-axis orientation and crystallization and that tension stress of the film reaches the lowest, and a strong UV photoluminescence(PL) peak and a weak blue emission peak were observed.

Keywords

II-VI semiconductors; X-ray diffraction; crystallisation; grain size; infrared spectra; internal stresses; photoluminescence; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; (002) orientation; RF magnetron sputtering; RF power; Si; Si(100) substrate; UV photoluminescence spectra; X-ray diffraction; ZnO; blue emission peak; c-axis orientation; crystallization; grain size; oxygen ratio; residual stress; tension stress; thin films; transmission spectra; Magnetic films; Optical films; Radio frequency; Sputtering; Substrates; Zinc oxide; RF magnetron sputtering; Visible spectrum; Zinc Oxide Film;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on

Conference_Location

Harbin, Heilongjiang, China

Print_ISBN

978-1-61284-087-1

Type

conf

DOI

10.1109/EMEIT.2011.6023604

Filename

6023604