Synthesis of nitrogen-doped graphene by co-segregation method

We report a facile strategy to grow nitrogen-doped graphene using embedded nitrogen and carbon in metal substrate via co-segregation method. As the doping is concurrently done in the co-segregation process of carbon and nitrogen species, N atoms can be substitutionally doped into the graphene lattice. This approach has great advantages for achieving a precise control of doping degree and location, which allows for growing various heterojunctions at desired location. In principle, this method can scale up to various elements doping of graphene, such as P- and BN- doped graphene.