DocumentCode
3364433
Title
PZT thin film bi-layer devices for improved actuation in MEMS
Author
Jenkins, D.F.L. ; Clegg, W.W. ; Cattan, E. ; Remiens, D.
Author_Institution
Centre for Res. in Inf. Storage Technol., Univ. of Plymouth, UK
Volume
2
fYear
2000
fDate
2000
Firstpage
729
Abstract
A potential application for ferroelectric thin films is micro positioning and actuation. For using PZT films as micro-actuators it is desirable to have film thicknesses of comparable size to the underlying structure. The amount of actuation possible is determined by the electric field across the film. Using a bi-layer should therefore increase the amount of actuation. PZT films of thickness 0.5 μm have been deposited as a bilayer. Micro-actuators have been fabricated using these structures, their electric properties measured and their electro-mechanical properties characterised and evaluated using optical beam deflection
Keywords
dielectric polarisation; lead compounds; microactuators; piezoceramics; piezoelectric actuators; piezoelectric thin films; 0.5 micron; MEMS actuation; PZT; PZT thin film bi-layer devices; PbZrO3TiO3; ceramic piezoelectric devices; electric field; electro-mechanical properties; film thicknesses; microactuation; optical beam deflection; piezoelectric thin films; Ceramics; Ferroelectric films; Ferroelectric materials; Microactuators; Micromechanical devices; Optical films; Piezoelectric films; Sputtering; Thin film devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.942423
Filename
942423
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