• DocumentCode
    3364433
  • Title

    PZT thin film bi-layer devices for improved actuation in MEMS

  • Author

    Jenkins, D.F.L. ; Clegg, W.W. ; Cattan, E. ; Remiens, D.

  • Author_Institution
    Centre for Res. in Inf. Storage Technol., Univ. of Plymouth, UK
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    729
  • Abstract
    A potential application for ferroelectric thin films is micro positioning and actuation. For using PZT films as micro-actuators it is desirable to have film thicknesses of comparable size to the underlying structure. The amount of actuation possible is determined by the electric field across the film. Using a bi-layer should therefore increase the amount of actuation. PZT films of thickness 0.5 μm have been deposited as a bilayer. Micro-actuators have been fabricated using these structures, their electric properties measured and their electro-mechanical properties characterised and evaluated using optical beam deflection
  • Keywords
    dielectric polarisation; lead compounds; microactuators; piezoceramics; piezoelectric actuators; piezoelectric thin films; 0.5 micron; MEMS actuation; PZT; PZT thin film bi-layer devices; PbZrO3TiO3; ceramic piezoelectric devices; electric field; electro-mechanical properties; film thicknesses; microactuation; optical beam deflection; piezoelectric thin films; Ceramics; Ferroelectric films; Ferroelectric materials; Microactuators; Micromechanical devices; Optical films; Piezoelectric films; Sputtering; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.942423
  • Filename
    942423