DocumentCode
3364604
Title
Growth habits and high temperature properties of langatate single crystal
Author
Xiao-niu Tu ; Yan-qing Zheng ; Hai-kuan Kong ; Yi-fan Tu ; Kai-nan Xiong ; Er-wei Shi
Author_Institution
Shanghai Inst. of Ceramics, Shanghai, China
fYear
2012
fDate
23-25 Nov. 2012
Firstpage
289
Lastpage
292
Abstract
This paper shows that high quality LGT single crystals with the size of 2" were grown by Czochralski method along different direction. The facets and the solid-liquid interface during crystal growth process were investigated, and flat interface was obtained by adjusting the rotation rate. X-cut wafers were used to test frequency constant, resistivity, piezoelectric constant and crystalline perfection. The results indicate that frequency constant value was around 2.77 MHz·mm with a vitiation of 0.2% along the whole crystal; the resistivity of top part and bottom part both higher than 107 Ohm·cm at 500 °C; piezoelectric coefficient (d11) was 7.0 pC/N; diffraction angle is 22.3228° and the full width at half maximum (fwhm) value is 33.5 arcsec. In all, the LGT crystal was in high quality and high homogeneous, can be used to high temperature acoustic wave devices and sensors in applications.
Keywords
crystal growth from melt; crystal structure; electrical resistivity; high-temperature effects; lanthanum compounds; piezoelectricity; Czochralski method; X-cut wafers; crystal growth process; diffraction angle; flat interface; full width at half maximum; high temperature acoustic wave devices; high temperature acoustic wave sensors; high-temperature properties; langatate single crystal; piezoelectric constant; resistivity; rotation rate; solid-liquid interface; temperature 500 degC; test frequency constant; Acoustic waves; Conductivity; Crystals; Diffraction; Temperature; Temperature sensors; Frequency; High temperature; Langatate; Resistivity; SPAWDA;
fLanguage
English
Publisher
ieee
Conference_Titel
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2012 Symposium on
Conference_Location
Shanghai
Print_ISBN
978-1-4673-4814-0
Type
conf
DOI
10.1109/SPAWDA.2012.6464091
Filename
6464091
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