Title :
Evaluation of de-scum methodology for through silicon via (TSV) etch to improve TSV defects performance
Author :
Goon Heng Wong ; Ding, Lixin ; Woon Leng Loh
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
3D chip stacking are the solution for achieving more transistors on microchips. Through Si via (TSV) is the key for 2.5D and 3D technology. In this paper, a novel integrated de-scum technique are evaluated to improve both etch and litho process margin and TSV profile. Using a proper and optimized de-scum methodology for TSV etch we demonstrated a defect free TSV profile without any significant process integration impact and also throughput loss.
Keywords :
etching; lithography; three-dimensional integrated circuits; 2.5D technology; 3D chip stacking; 3D technology; TSV etch; defect free TSV profile; etch process margin; integration impact; litho process margin; microchips; novel integrated descum technique; optimized descum methodology; through Si via; transistors; Etching; Lithography; Resists; Silicon; Three-dimensional displays; Through-silicon vias; Throughput;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-2832-3
DOI :
10.1109/EPTC.2013.6745825
