DocumentCode :
3365040
Title :
High energy density dielectrics for symmetric Blumleins
Author :
Huebner, W. ; Zhang, S.C.
Author_Institution :
Dept. of Ceramic Eng., Missouri Univ., Rolla, MO, USA
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
833
Abstract :
Multilayer, tape cast ceramics are being developed for use in large area, high voltage devices in order to achieve high specific energy densities (>106 J/m3) and physical size reduction. In particular, symmetric Blumleins are desired with the following properties: High voltage hold off (⩾300 kV); High, nondispersive permittivity: ≈100 to 900; Ability to be fabricated into various shapes and sizes; Surface flashover inhibition at the edge; Ability to be triggered by surface flashover switching. The compositions being pursued are based on pure BaTiO3 dielectrics. Our approach is to add glass phase additions which result in not only near theoretical densities, but also allow for fabrication of more complex geometries through high temperature creep. Variations in the volume fraction and connectivity of the glassy phase allow for direct control of the permittivity as well as energy density. Structures up to 5" in diameter have been fabricated and pulse-tested at field strengths over 300 kV/cm. A strong dependence of breakdown strength and permittivity has been observed and correlated with microstructure and the glass composition. This paper presents the interactive effects of manipulation of these variables
Keywords :
barium compounds; ceramics; creep; dielectric materials; electric breakdown; flashover; permittivity; pulsed power technology; 300 kV; 5 in; BaTiO3; BaTiO3 dielectric material; breakdown strength; connectivity; energy density; glass phase additions; high-temperature creep; large-area high-voltage device; microstructure; multilayer tape cast ceramic; permittivity; pulsed power technology; surface flashover switching; symmetric Blumlein; voltage hold-off; volume fraction; Ceramics; Dielectrics; Fabrication; Flashover; Geometry; Glass; Nonhomogeneous media; Permittivity; Shape; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.942447
Filename :
942447
Link To Document :
بازگشت