• DocumentCode
    3365183
  • Title

    A model for rapid synthesis of large volume InP melts

  • Author

    Iseler, G. ; Anselmo, A.P. ; Bliss, D.F. ; Bryant, G. ; Lancto, R.

  • Author_Institution
    Rome Lab., Hanscom AFB, MA, USA
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    50
  • Lastpage
    52
  • Abstract
    The rapid synthesis of InP is routinely carried out in our laboratory by subliming phosphorus into encapsulated liquid In. We have constructed the first model of this process by considering the equilibrium vapor pressure over red phosphorus as its temperature increases, and that over In(1-x)Px as its phosphorus content increases
  • Keywords
    III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; semiconductor process modelling; sublimation; vapour pressure; In; In(1-x)Px; InP; P; encapsulated liquid In; equilibrium vapor pressure; large volume InP melts; model; phosphorus content; rapid synthesis; red phosphorus; sublimation; temperature increase; Control system synthesis; Indium phosphide; Laboratories; Large-scale systems; Power generation; Radio frequency; Semiconductor device modeling; Solid modeling; Solid state circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491931
  • Filename
    491931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3365183