Growth of sputtered AlN thin film on glass in room temperature

Author

Lee, C.K. ; Placido, F. ; Cochran, S. ; Kirk, K.J.

Author_Institution

Sch. of Inf. & Commun. Technol., Univ. of Paisley, UK

Volume

2

fYear

2002

fDate

8-11 Oct. 2002

Firstpage

1119

Abstract

Highly [002] oriented AlN thin film is deposited on glass substrate by RF magnetron sputtering method. The X-ray diffraction shows that the AlN thin film has grown in a preferred [002] orientation but other orientation starts to build up as the thickness increases. The surface morphology of the c-axis texture of the AlN thin film is obtained by scanning electron microscopy. The d₃₃ coefficient of the AlN thin film is measured using piezoresponse microscopy and the result obtained is 3.8pm/V.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; scanning electron microscopy; semiconductor growth; sputter deposition; texture; wide band gap semiconductors; 20 C; AlN; RF magnetron sputtering method; X-ray diffraction; c-axis texture; d₃₃ coefficient; glass; glass substrate; highly [002] oriented AlN thin film; piezoresponse microscopy; preferred [002] orientation; room temperature; scanning electron microscopy; sputtered AlN thin film; surface morphology; Glass; Radio frequency; Scanning electron microscopy; Sputtering; Substrates; Surface morphology; Surface texture; Temperature; Transistors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-7582-3

Type

conf

DOI

10.1109/ULTSYM.2002.1192490

Filename

1192490