Mobility and reliability improvements of fluorinated gate oxide for VLSI technology

Author

Vishnubhotla, L. ; Balasinski, A. ; Wang, X.W. ; Ma, T.P. ; Tseng, H.-H. ; Tobin, P.J.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

44

Lastpage

48

Abstract

By incorporating appropriate quantities of fluorine into the gate SiO₂, we achieved improvement in channel mobility as well as transconductance of both nand p-channel submicron LDD MOSFETs for gate fields from 0.7 to 3 MV/cm, and increased their lifetimes based on hot-carrier stress tests. Possible mechanisms are briefly discussed

Keywords

CMOS integrated circuits; MOSFET; VLSI; carrier mobility; hot carriers; integrated circuit reliability; integrated circuit technology; life testing; SiO₂; VLSI technology; channel mobility; fluorinated gate oxide; gate fields; hot-carrier stress tests; n-channel devices; p-channel devices; reliability improvements; submicron LDD MOSFETs; transconductance; CMOSFETs; Charge pumps; Electric breakdown; Hot carriers; MOS devices; MOSFETs; Microelectronics; Stress; Transconductance; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524631

Filename

524631