• DocumentCode
    3365309
  • Title

    In-situ-X-Ray investigation on pressure release during conventional and diffusion soldering

  • Author

    Klemm, Alexander ; Jahngen, Patrick ; Oppermann, Martin ; Zerna, Thomas

  • Author_Institution
    Electron. Packaging Lab., Tech. Univ. Dresden, Dresden, Germany
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    821
  • Lastpage
    826
  • Abstract
    The need for higher operating temperatures in power electronics is driving the research and development on alternative technologies to conventional soldering. One of them is diffusion soldering. Khaja et al. proposed a new approach by printing very thin layers of solder paste. This approach requires a special soldering process to reduce the void content to an acceptable value. Vacuum soldering and overpressure soldering were shown to be appropriate processes [2], [3]. This work investigates both process types with In-situ-X-Ray-analysis. We showed that overpressure reduces the outgassing of voids significantly whereas negative pressure accelerates it. This can be explained by Le Chatelier´s principle. Furthermore we showed that the solder joints should be cooled immediately after the pressure was reapplied in order to achieve a low void content. The analysis of single voids before and after the pressure change proves that they change their volume according to the ideal gas law. As result of our investigations we conclude that vacuum soldering processes are more suitable for diffusion soldering than overpressure processes.
  • Keywords
    power electronics; soldering; Le Chatelier principle; diffusion soldering; ideal gas law; operating temperatures; overpressure soldering; power electronics; pressure release; solder joints; solder paste; vacuum soldering processes; x-ray investigation; Electronics packaging; Equations; Heating; Mathematical model; Pressure measurement; Soldering; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745836
  • Filename
    6745836