DocumentCode :
3365423
Title :
Low power real time electronic neuron VLSI design using subthreshold technique
Author :
Lee, Young Jun ; Lee, Jihyun ; Kim, Y.B. ; Ayers, J. ; Volkovskii, A. ; Selverston, A. ; Abarbanel, H. ; Rabinovich, M.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Volume :
4
fYear :
2004
fDate :
23-26 May 2004
Abstract :
We discuss a VLSI electronic neuron circuit that implements the Hindmarsh and Rose neuron model. Magnitude and time scaling techniques are employed for a 2 V power supply operation. A subthreshold operation technique and a single MOS resistor are used to minimize area and power consumption. Output bursts of the electronic neuron can be modulated dynamically by varying the input voltage level. The circuit is designed using a 0.25 μm CMOS standard process, and the total power dissipation is 163.4 μwatt.
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; integrated circuit modelling; neural nets; operational amplifiers; 0.25 micron; 163.4 muW; 2 V; CMOS standard process; Hindmarsh neuron model; Rose neuron model; input voltage level; low power real time electronic neuron VLSI design; power consumption; power dissipation; single MOS resistor; subthreshold operation technique; Biological control systems; Biological system modeling; Circuits; Energy consumption; Equations; Hardware; Neurons; Power supplies; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN :
0-7803-8251-X
Type :
conf
DOI :
10.1109/ISCAS.2004.1329111
Filename :
1329111
Link To Document :
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