Title :
Relaxor behavior of MgO dispersed-Pb(Mg1/3Nb2/3 )O3-PbTiO3 (90/10) nanocomposite thin films
Author :
Park, Dongkyun ; Lee, Jeon-Kook ; Cheong, Deok-Soo ; Park, Jong-Wan
Author_Institution :
Thin Film Technol. Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Pb(Mg1/3Nb2/3)O3-PbTiO3 [PMN-PT] films were deposited by the radio-frequency (r.f) magnetron sputtering technique and post-annealed. The growth of PMN-PT films as a function of MgO concentration in targets, annealing temperature and heating /cooling rate during annealing was studied. The films deposited from 66 mol% MgO excess target showed good perovskite structure in this study. For film deposited from the target with 66 mol% MgO excess content and postannealed conventionally at 750°C for 10 minutes in oxygen flow, preferential (111) orientation of the perovskite phase and pyrochlore phase of less than 3% was observed. And the room temperature dielectric constant was 2500 at 1 kHz. Dielectric and structural properties exhibited relaxor-like behavior. Excess MgO in PMN-PT was homogeneously precipitated and dispersed in grain and grain bounder. The number of MgO nano-particles increased with increasing MgO content in PMN-PT targets
Keywords :
X-ray diffraction; annealing; dielectric relaxation; ferroelectric materials; ferroelectric thin films; lead compounds; nanostructured materials; permittivity; sputtered coatings; 1 kHz; 10 min; 750 C; MgO concentration; MgO dispersed-Pb(Mg1/3Nb2/3)O3-PbTiO3 nanocomposite thin films; PMN-PT films; PMN-PbTiO3; PbMgO3NbO3-PbTiO3; annealing; annealing temperature; grain boundry; heating /cooling rate; perovskite structure; pyrochlore phase; relaxor behavior; room temperature dielectric constant; Ceramics; Cooling; Dielectric constant; Ferroelectric materials; Heating; Lead; Niobium; Rapid thermal annealing; Sputtering; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942472
