Switching properties of the Pb0.9La0.1TiO3 thin film

Switching properties of the Pb_0.9La_0.1TiO ₃ thin film have been measured. As the external input pulse voltage increases from 2 to 5 V, the switching time decreases from 0.49 to 0.12 μs. The activation energy (E_a) is obtained as 209 kV/cm from the relation between the switching time and the applied pulse voltage. The switched charge densities at 5 V obtained from the hysteresis loop and the polarization switching are 11.69 and 13.02 μC/cm², respectively, which agree relatively well with each other and show a difference of 10%. As the top electrode area increases from 3.14×10^-4 to 5.03×10^-3 cm^-2, the switching time increases from 0.12 to 1.88 μs. As the load resistance increases from 50 Ω to 33 kΩ, the switching time increases from 0.12 μs to 9.7 μs. These switching characteristics indicate that Pb_0.9La_0.1TiO₃ thin film can be well applied in nonvolatile memory devices