Title :
Interpretation of switching data in oxide resistive switching thin films
Author :
Yoo, In K. ; Kim, Jong W. ; Kim, Kwon Y.
Author_Institution :
Samsung Adv. Inst. of Technol., Samsung Electron., Suwon, South Korea
Abstract :
The overall research status of resistive switching thin films was reviewed in conjunction with patents in order to find a guideline for prospective commercial applications. Oxide resistive switching applications may be repositioned toward extreme devices such as reconfigurable logic. Further research opportunities may be found in the field of the perfect conductor-insulator transition materials design by applying materials informatics.
Keywords :
electrical conductivity transitions; resistive RAM; switching; thin films; RRAM; materials informatics; oxide resistive switching thin films; perfect conductor-insulator transition materials design; reconfigurable logic; switching data; Commercialization; Informatics; Patents; Portfolios; Reconfigurable logic; Resistance; Switches; Computational materials design; Data driven materials design; Materials informatics; RRAM; Resistive switching;
Conference_Titel :
Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the
Conference_Location :
Singapore
DOI :
10.1109/ISAF.2015.7172713
