Killer defect detection using the IR-OBIRCH (infrared optical-beam-induced resistance-change) method

Author

Nikawa, Kiyoshi ; Inoue, Shoji ; Morimoto, Kazoyuki

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1999

fDate

1999

Firstpage

103

Lastpage

106

Abstract

The IR-OBIRCH method has been applied to analyze real failures of DRAMs, ASICs, power MOSFETs, and microcomputers, which failed during mass production, development, user test, and ESD simulation. In the analysis of a microcomputer, in order to reproduce the failure state during IR-OBIRCH imaging, we applied test vectors from an ATE clocked to the IR-OBIRCH system. The results showed that the IR-OBIRCH is suitable not only for improving reliability but also for increasing yield

Keywords

failure analysis; fault location; infrared imaging; integrated circuit reliability; integrated circuit testing; integrated circuit yield; production testing; ASICs; DRAMs; ESD simulation; IR optical-beam-induced resistance-change method; IR-OBIRCH imaging; device failure; killer defect detection; mass production; microcomputers; power MOSFETs; reliability improvement; test vectors application; yield enhancement; Analytical models; Electrostatic discharge; Failure analysis; Image analysis; Infrared detectors; MOSFETs; Mass production; Microcomputers; Optical imaging; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

0-7803-5403-6

Type

conf

DOI

10.1109/ISSM.1999.808748

Filename

808748