Title :
6 kV/4 kA gate commutated turn-off thyristor with operation DC voltage of 3.6 kV
Author :
Satoh, K. ; Nakagawa, T. ; Yamamoto, M. ; Morishita, K. ; Kawakami, A.
Author_Institution :
Power Device Div., Mitsubishi Elec. Corp., Fukuoka City, Japan
Abstract :
Recently, a 4.5 kV/4 kA gate commutated turn-off thyristor (GCT) has been successfully introduced to the market. The GCT is a new high power device which has not only the same high blocking capability and low on-state voltage as the GTO, but also the same high turn-off performance as the IGBT. In order to ascertain the possibility of GCT use in higher voltage areas, a 6 kV/4 kA GCT with a DC operating voltage of 3.6 kV (long term DC stability of 100 FIT) has been developed by the adoption of the PT structure and local lifetime control, and has been evaluated. The results achieved indicated that the GCT may become a main high power device for high power applications
Keywords :
carrier lifetime; high-voltage techniques; semiconductor device testing; stability; thyristors; 3.6 kV; 4 kA; 4.5 kV; 6 kV; DC operating voltage; GCT thyristor; GCT voltage; PT structure; blocking capability; gate commutated turn-off thyristor; local lifetime control; long term DC stability; on-state voltage; power device; turn-off performance; Anodes; Cathodes; Cities and towns; Inductance; Insulated gate bipolar transistors; Low voltage; Packaging; Power engineering and energy; Snubbers; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702669
