Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers

Author

Hammar, Mattias ; Yu Xiang ; Xingang Yu ; Berggren, Jesper ; Zabel, Thomas ; Akram, Muhammad Nadeem

Author_Institution

Sch. of Inf. & Commun. Technol, KTH - R. Inst. of Technol., Kista, Sweden

fYear

2013

fDate

6-9 July 2013

Firstpage

141

Lastpage

142

Abstract

We report on the design, fabrication and characterization of pnp-type 980-nm transistor-vertical-cavity surface-emitting lasers (T-VCSELs). Using an epitaxial regrowth process and a triple-intracavity current injection scheme we demonstrate static performance levels quite comparable to those of conventional VCSELs, including sub-mA threshold base current, mW-range output power and continuous-wave operation at least up to 50°C.

Keywords

epitaxial growth; laser cavity resonators; surface emitting lasers; T-VCSEL; continuous-wave operation; epitaxial regrowth; pnp-type transistor; room-temperature operation; static performance levels; temperature 293 K to 298 K; transistor-vertical-cavity surface-emitting lasers; triple-intracavity current injection; wavelength 980 nm; Cavity resonators; Dielectrics; Distributed Bragg reflectors; Fabrication; Gallium arsenide; Photonics; Transistors; VCSEL; transistor VCSEL; transistor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on

Conference_Location

Hsinchu

Print_ISBN

978-1-4799-0464-8

Type

conf

DOI

10.1109/ICAIT.2013.6621535

Filename

6621535